| PART |
Description |
Maker |
| 48SD3208RPFE 48SD3208RPFH 48SD3208RPFK |
CAP 1.5UF 50V CERAMIC MONO 20% 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
|
Maxwell Technologies, Inc
|
| K4M511633C-RBF1H K4M511633C-RBF75 K4M511633C-RBL K |
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
8M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
|
Samsung semiconductor
|
| TC59SM704AFTL-70 TC59SM704AFTL-80 TC59SM716AFTL-70 |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
|
| M366S3323DTS M366S3323DTS-C1H M366S3323DTS-C1L M36 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung semiconductor
Samsung Electronic
|
| K4S280432I-TL750 |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
|
| UPD45V128421G5-A75-9JF |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
ELPIDA MEMORY INC
|
| EM63B165TS-5ISG EM63B165TS-6ISG EM63B165TS-7ISG |
32M x 16 bit Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| EM63B165TS-5SG EM63B165TS-6SG EM63B165TS-7SG |
32M x 16 bit Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| TC59SM704FTL-10 TC59SM708FTL-10 |
32M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO54
16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
|
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| HYB39S5121600AT-8 HYB39S5121600AT-7 HYB39S5121600A |
512Mb (32M x 16) PC100 2-2-2 Available Q402
512Mb (32M x 16) PC133 2-2-2 Available Q402
512Mb (32M x 16) PC133 3-3-3 Available Q402
128M X 4 SYNCHRONOUS DRAM, 5 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
